Photocurrent of Undoped, n- and p-Type Si Nanowires Synthesized by Thermal Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition is investigated in this study. For an undoped Si nanowire biased at 3 V, photocurrent excited by the 633-nm wavelength light is stronger in intensity than that excited by the 325-nm wavelength light, and photoresponses are rapid when the light is switched on and off. In contrast, for the n- and p-type Si nanowires, photocurrent excited by the 633-nm wavelength light is not measurable, although one excited by 325-nm wavelength light is still detectable. And photoresponses obtained for the doped Si nanowires are slower, compared with the undoped Si nanowire. Photocurrent phenomena observed in the undoped, n- and p-type Si nanowires are discussed in this paper.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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KIM Hyunsuk
Department of Electrical Engineering and Institute for Nano Science, Korea University
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MOON Byung-Moo
Department of Electrical Engineering and Institute for Nano Science, Korea University
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Min Byungdon
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Sangsig
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Kyung-hwan
Department Of Electrical And Information Engineering Kyungwon University
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Jeong Dong-young
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Keem Kihyun
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Cho Kyoungah
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Noh Taeyong
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, 440-600, Korea
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Park Jucheol
Samsung Advanced Institute of Technology, P.O.Box 111, Suwon, 440-600, Korea
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Suh Minchul
2AT Group Tech. Development 1-Team Corporate R&D Center, Samsung SDI Company, 428-5, Gongse-ri, Giheung-eup, Yonin-si, Gyeonggi-do 449-557, Korea
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Suh Minchul
2AT Group Tech. Development 1-Team Corporate R&D Center, Samsung SDI Company, 428-5, Gongse-ri, Giheung-eup, Yonin-si, Gyeonggi-do 449-557, Korea
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Kim Kyung-Hwan
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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Moon Byung-Moo
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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Kim Kyung-Hwan
Department of Cardiovascular Thoracic Surgery, Seoul National University College of Medicine, Seoul National University Hospital
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