Depth-Resolved Cathodoluminescence of III–V Nitride Films Grown by Plasma-Assisted Molecular Beam Epitaxy

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概要

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• The luminescence properties of III–V nitride films (an undoped GaN, an undoped GaN/Al0.2Ga0.8N multiquantum well, and a $p$-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy. From the low- and room-temperature CL of the undoped GaN and GaN/AlGaN MQW films, an emission at 2.9 eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface between the film and the substrate. In order to explain the depth-resolved CL of the Mg-doped GaN film, the configuration coordinate model is proposed on the basis of the local strain near the Mg impurities. This model demonstrates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the film.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-02-15

著者

• KIM Sangsig

  Department of Electrical Engineering and Institute for Nano Science, Korea University

• Shim Kyu-hwan

  Microelectronics Lab Electronics And Telecommunications Research Institute

• MYOUNG Jae-Min

  Department of Materials Science and Engineering, Yonsei University

• Kim Sangsig

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Kim Sangsig

  Department Of Electrical Engineering Korea University

• Myoung Jae-min

  Department Of Materials Science And Engineering Yonsei University

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