Enhanced Performance of ZnO Nanowire Field Effect Transistors by H2 Annealing
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概要
- 論文の詳細を見る
The electrical properties of ZnO nanowires are significantly dependent on their surface states. The surface trap charges degrade the device performance of field effect transistors. These trap charges are reduced by H2 annealing. In this work, a back-gate ZnO nanowire field effect transistor (FET) was fabricated by a photolithographic process, and its electrical properties were characterized. This back-gate FET was subsequently annealed under a flow of H2/Ar gas for 20 min. The back-gate FET annealed for 20 min exhibited remarkably enhanced electrical characteristics, as compared with the as-fabricated back-gate FET; the peak transconductance was increased from 40 to 448 nS, the field effect mobility from 27 to 302 cm2 V-1 s-1, and the $I_{\text{max}}/I_{\text{min}}$ ratio from 1.5 to $10^{5}$.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-30
著者
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MOON Byung-Moo
Department of Electrical Engineering and Institute for Nano Science, Korea University
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Kim Sangsig
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Jeong Dong-young
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Keem Kihyun
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Yoon Changjoon
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kang Jeongmin
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Moon Byung-Moo
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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Yoon Changjoon
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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