Aging Effect on the Optoelectronic Properties of a Single ZnO Nanowire
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概要
- 論文の詳細を見る
The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current–voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is stronger, and the photoresponse is slower than those of the as-grown nanowire. One of the possible explanations is that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-07-15
著者
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KIM Hyunsuk
Department of Electrical Engineering and Institute for Nano Science, Korea University
-
Min Byungdon
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Young
Department Of Agricultural Chemistry The University Of Tokyo
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Kim Sangsig
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Jeong Dong-young
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Keem Kihyun
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Cho Kyoungah
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kang Jeongmin
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Young
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Jeong Dong-Young
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
-
Kim Sangsig
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
-
Min Byungdon
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
-
Keem Kihyun
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
-
Cho Kyoungah
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
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Kang Jeongmin
Department of Electrical Engineering and Institute of Nano Science, Korea University, Seoul 136-701, Korea
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