Photoluminescence Characteristics of Mn- and Pr-doped ZnS Nanoparticles Optically Annealed with UV Illumination
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概要
- 論文の詳細を見る
Undoped, Mn-doped, Pr-doped, and Mn- and Pr-codoped ZnS nanoparticles were synthesized by a wet chemical method, and these nanoparticles were optically annealed in air or vacuum. In the photoluminescence (PL) spectra of the optically annealed nanoparticles, a sulfur–vacancy-related PL band at around 420 nm, a PL band associated with the $\text{$^{4}$T$_{1}$}\rightarrow\text{$^{6}$A$_{1}$}$ transition of Mn2+, and PL peaks associated with Pr-related complexes were investigated during optical annealing. The integrated PL intensities for the nanoparticles annealed in air increased more markedly with the optical annealing time than those for the nanoparticles annealed in vacuum. This increase may be explained by the photooxidation of the surface, the enhancement of the crystal quality, and the gradual diffusion of luminescent ions into the crystal lattice.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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KIM Hyunsuk
Department of Electrical Engineering and Institute for Nano Science, Korea University
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Kim Sung
Department Of Anatomy
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Kim Sangsig
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Cho Kyoungah
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Park Byoungjun
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Jin-hyoung
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Lee Jun
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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Lee Jun
Department of Biology, College of Natural Sciences, Chosun University
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Noh Taeyong
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, POB 111, Suwon 440-600, Korea
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Kim Jin-Hyoung
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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Kim Sung
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
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