Photocurrent Characteristics of CdTe Nanoparticles
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概要
- 論文の詳細を見る
The photocurrent of CdTe nanoparticles is characterized in this study to investigate the transport mechanism of charge carriers in these nanoparticles. Time-dependent photocurrent was measured while above-gap (458 nm wavelength) light was switched on and off periodically. Rapidly and slowly responding photocurrents overlapped in the time-dependent photocurrent. Our careful investigation into the time-dependent photocurrent reveals that photogenerated electrons contribute to the slowly responding photocurrent and that photogenerated holes give rise to the rapidly responding photocurrent. On the basis of our experimental results, we suggest that the transport of the photogenerated electrons takes place in the conduction band after their trapping and detrapping processes and that the photogenerated holes are transported in the valence band. In addition, time-dependent photocurrent excited by below-gap (633 nm wavelength) light, dark current, and current–voltage ($I$–$V$) loops are analyzed in this paper.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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KIM Hyunsuk
Department of Electrical Engineering and Institute for Nano Science, Korea University
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Kim Sangsig
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Jeong Dong-young
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Cho Kyoungah
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Jin-hyoung
Department Of Electrical Engineering And Institute For Nano Science Korea University
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Kim Jin-Hyoung
Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea
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