Electrical Characteristics of ZnO Nanowire-Based Field-Effect Transistors on Flexible Plastic Substrates

概要

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ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150 °C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an $I_{\text{on}}/I_{\text{off}}$ ratio of $10^{6}$. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at $V_{\text{GS}}=10$ V is less than 3%.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-09-30