Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes

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概要

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• The optical characteristics of an n-type ZnO/p-type Si crossed nanowire (NW) light-emitting diode (LED) were investigated in this study. N-ZnO nanowires (NWs) were synthesized by thermal chemical vapor deposition, and p-Si NWs were fabricated by etching a single crystalline Si wafer. The p–n heterojunction LED formed by the cross of the n-ZnO and p-Si NWs selected from the NWs prepared in this work exhibited the current rectifying behavior with the turn-on voltage of 1.3 V. Our investigation of the photoluminescence spectrum of the as-grown n-ZnO NWs and electroluminescence spectrum of the n-ZnO/p-Si crossed NW LED reveals that both spectra have the same position of peaks at 390 nm. This result indicates that the UV emission from the crossed NW LED is mostly attributed to the band-to-band transition of electrons in the ZnO NW.

• 2010-06-25

著者

• Kang Jeongmin

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Sangsig Kim

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-701, Korea

• Sangsig Kim

  Department of Electrical Engineering, Korea University, Seoul 136-713, Korea

• Changjoon Yoon

  Department of Electrical Engineering, Korea University, Seoul 136-713, Korea

• Kim Kwangeun

  Department of Electrical Engineering, Korea University, Seoul 136-713, Korea

• Lee Myeongwon

  Department of Electrical Engineering, Korea University, Seoul 136-713, Korea

• Kyoungah Cho

  Department of Electrical Engineering, Korea University, Seoul 136-713, Korea

• Kyoungah Cho

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-701, Korea

関連論文

• Photoresponse of a single ZnO nanowire illuminated by modulated light
• Photocurrent of Single Silicon Nanowire synthesized by Thermal Chemical Vapor Deposition
• Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes
• Aging Effect on the Optoelectronic Properties of a Single ZnO Nanowire
• Electrical Characteristics of ZnO Nanowire-Based Field-Effect Transistors on Flexible Plastic Substrates
• Enhanced Performance of ZnO Nanowire Field Effect Transistors by H2 Annealing
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