Synthesis of Single Crystalline In2O3 Nanowires and Their Photoluminescence Characteristics

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概要

• 論文の詳細を見る

• Single crystalline In2O3 nanowires have been synthesized by thermal evaporation of ball-milled In2O3 powders without any catalysis. The diameter and length range of the synthesized In2O3 nanowires are about 25 nm and 20–30 μm, respectively. Their X-ray diffraction pattern is indexed to bcc structure with a lattice constant of $a=1.0126$ nm. High-resolution transmission electron microscopy image shows that the inner part of the In2O3 nanowires is free of dislocations, and that any amorphous layers are not formed on the surface of the nanowires. In their PL spectrum, two peaks are observed in the ultraviolet region centered at 380 nm and in the visible region centered at 550 nm.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-06-15

著者

• Lee Jong-soo

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• KIM Hyunsuk

  Department of Electrical Engineering and Institute for Nano Science, Korea University

• Min Byungdon

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Kim Sangsig

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Jeong Dong-young

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Keem Kihyun

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Cho Kyoungah

  Department Of Electrical Engineering And Institute For Nano Science Korea University

• Jeong Dong-Young

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Min Byungdon

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Lee Jong-Soo

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Keem Kihyun

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

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