Transparent Conductive Thin Film for Top Emitting Organic Light Emitting Diodes by Sputtering Method

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概要

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• The indium tin oxide (ITO) cathode electrode of top emitting organic light emitting diodes (TOLEDs) was deposited by facing targets sputtering (FTS) method which can deposit thin films with low substrate damage. And it also use a plasma-free sputtering method in which substrate is located apart from plasma. So the temperature increase of substrate due to the bombardment of high-energy particles can be restrained. The ITO thin film which is a transparent electrode was deposited on the cell (Mg:Ag/LiF/EML/HTL/ITO) using two magnetic field such as concentrated magnetic field type and distributed magnetic field type, respectively. Also, the ITO thin films were deposited by sputtering current at working gas (Ar:O2 mixture gas) pressure 1 mTorr. Electrical and optical properties of ITO thin films which deposited on amorphous glass were measured and current–voltage ($I$–$V$) characteristics of ITO thin film on the cell were measured. In the results, the leakage-current density of ITO/cell prepared at concentrated magnetic filed type and distribution magnetic filed type showed about $1\times 10^{-3}$ mA/cm2 at $-6$ V and $1\times 10^{-5}$ mA/cm2 at $-6$ V, respectively.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-10-30

著者

• Kim Kyung-hwan

  Department Of Electrical And Information Engineering Kyungwon University

• Kim Kyung-Hwan

  Department of Electrical and Information Engineering, Kyungwon University, Seoul, Korea

• Keum Min-Jong

  Department of Electrical and Information Engineering, Kyungwon University, Seoul, Korea

• Kim Kyung-Hwan

  Department of Cardiovascular Thoracic Surgery, Seoul National University College of Medicine, Seoul National University Hospital

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