Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Lee E‐h
Electronics And Telecommunications Res. Inst. Taejon Kor
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Lee El-hang
Research Department Electronics And Telecommunication Research Institute
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Park S‐j
Kwangju Inst. Sci. And Technol. (k‐jist) Kwangju Kor
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Lee El-hang
Research Department Electronics And Telecommunications Research Institute
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Lee El-hang
Electronics And Telecommunications Research Institute
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Kim Seong-soo
Charged Particle Beam And Plasma Laboratory Department Of Electrophysics-pdp Research Center Kwangwo
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Lee El-hang
Basic Research Laboratory Electronics And Telecommunications Research Institute
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RO Jeong-Rae
Research Department, Electronics and Telecommunications Research Institute
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KIM Sung-Bock
Research Department, Electronics and Telecommunications Research Institute
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PARK SEONG-JU
Research Department, Electronics and Telecommunications Research Institute
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Lee E‐h
Research Department Electronics And Telecommunications Research Institute
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Kim S‐b
Electronics And Telecommunication Res. Inst. Daejeon Kor
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Kim Sung-bock
Charged Particle Beam And Plasma Laboratory Department Of Electrophysics-pdp Research Center Kwangwo
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Park S‐j
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)
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Ro Jeong-rae
Research Department Electronics And Telecommunications Research Institute
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Park Seong-ju
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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