Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
-
Lee E‐h
Electronics And Telecommunications Res. Inst. Taejon Kor
-
Lee El-hang
Research Department Electronics And Telecommunication Research Institute
-
Park S‐j
Kwangju Inst. Sci. And Technol. (k‐jist) Kwangju Kor
-
Lee El-hang
Research Department Electronics And Telecommunications Research Institute
-
Lee El-hang
Electronics And Telecommunications Research Institute
-
Kim Seong-soo
Charged Particle Beam And Plasma Laboratory Department Of Electrophysics-pdp Research Center Kwangwo
-
Lee El-hang
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
RO Jeong-Rae
Research Department, Electronics and Telecommunications Research Institute
-
KIM Sung-Bock
Research Department, Electronics and Telecommunications Research Institute
-
PARK SEONG-JU
Research Department, Electronics and Telecommunications Research Institute
-
Lee E‐h
Research Department Electronics And Telecommunications Research Institute
-
Kim S‐b
Electronics And Telecommunication Res. Inst. Daejeon Kor
-
Kim Sung-bock
Charged Particle Beam And Plasma Laboratory Department Of Electrophysics-pdp Research Center Kwangwo
-
Park S‐j
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)
-
Ro Jeong-rae
Research Department Electronics And Telecommunications Research Institute
-
Park Seong-ju
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
関連論文
- Plasma Propagation Speed and Electron Temperature in Surface-Discharged Alternating-Current Plasma Display Panels
- Influence of Driving Frequency on the System Parameters in Surface Discharge of AC Plasma Display Panels
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- The Migration Path of Co Ions in Co-Substituted Spinel Ferrite Thin Films during Magnetic Annealing
- Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO : Semiconductors
- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Partial Melting of Yttrium-Excess YBa_2Cu_3O_y Superconductors
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Photoinduced Hole Tunneling in Resonant Tunneling Diodes
- Dynamic Optical Interconnection in Free-Space Switching System
- Formation of Natural InAlAs Vertical Superlattices
- Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- Redox Behavior of Poly(diphenylamine-4,4'-diyl) in Acidic Aqueous Media and Electronic Properties of the Doped Polymer
- Effect of Incident Beam Width on Light Transmission Enhancement by Bow-Tie-Shaped Nano-Aperture
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes