High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
-
Lee E‐h
Electronics And Telecommunications Res. Inst. Taejon Kor
-
Lee El-hang
Research Department Electronics And Telecommunication Research Institute
-
KWON O-Kyun
Basic Research Laboratory, Electronics and Telecommunications Research Institute
-
Kwon O‐k
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
Kwon O‐k
Electronics And Telecommunications Res. Inst. Taejon Kor
-
Lee El-hang
Research Department Electronics And Telecommunications Research Institute
-
Lee El-hang
Electronics And Telecommunications Research Institute
-
Lee El-hang
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
Kwon O-kyun
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
Lee E‐h
Research Department Electronics And Telecommunications Research Institute
-
LEE Kyu-Seok
Basic Research Laboratory, Electronics and Telecommunications Research Institute
-
AHN Byung-Tae
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
-
Ahn Byung-tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
-
Lee Kyu-seok
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
関連論文
- Fabrication Method of Densely Spaced 1.55 μm Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array Structure for the Application of Dense Wavelength Division Multiplexing
- 1.3μm Vertical-Cavity Surface-Emitting Lasers Using Heavy Ion Implantation and Dielectric Mirror : Optics and Quantum Electronics
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Multiple-Wavelength All-Monolithic 1.55μm Vertical-Cavity Surface-Emitting Laser Arrays
- 1.55μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction
- 1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Partial Melting of Yttrium-Excess YBa_2Cu_3O_y Superconductors
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes
- Photoinduced Hole Tunneling in Resonant Tunneling Diodes
- Dynamic Optical Interconnection in Free-Space Switching System
- Formation of Natural InAlAs Vertical Superlattices
- Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- Effect of Incident Beam Width on Light Transmission Enhancement by Bow-Tie-Shaped Nano-Aperture
- Fabrication Method of Densely Spaced 1.55 μm Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array Structure for the Application of Dense Wavelength Division Multiplexing
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- 1.1 mW Single-Mode Output Power of All-Monolithic 1.3 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Multiple-Wavelength All-Monolithic 1.55-μm Vertical-Cavity Surface-Emitting Laser Arrays
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes