1.3μm Vertical-Cavity Surface-Emitting Lasers Using Heavy Ion Implantation and Dielectric Mirror : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-01
著者
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Ju Y‐g
Electronics And Telecommunications Res. Inst. Daejeon Kor
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JU Yong-Gu
Electronics and Telecommunications Research Institute
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HAHN Won-Suk
Electronics and Telecommunications Research Institute
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SHIN Jae-Heon
Electronics and Telecommunications Research Institute
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KIM Jong-Hee
Electronics and Telecommunications Research Institute
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ROH Jeong-Raw
Electronics and Telecommunications Research Institute
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KWON O-Kyun
Electronics and Telecommunications Research Institute
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YOO Byung-Soo
Electronics and Telecommunications Research Institute
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Ju Y‐g
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kwon O‐k
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Han W‐s
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Ju Young-gu
Electronics And Telecommunications Research Insitute
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Shin J‐h
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kim Jong-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Kim Jong-hee
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kim Jong-hee
Electronics And Telecommunications Research Insitute
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Kwon O-kyun
Electronics And Telecommunications Research Insitute
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Shin Jae-heon
Electronics And Telecommunications Research Insitute
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Yoo Byung-soo
Electronics And Telecommunications Research Insitute
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Yoo B‐s
Raycan Co. Ltd.
関連論文
- Fabrication Method of Densely Spaced 1.55 μm Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array Structure for the Application of Dense Wavelength Division Multiplexing
- 1.3μm Vertical-Cavity Surface-Emitting Lasers Using Heavy Ion Implantation and Dielectric Mirror : Optics and Quantum Electronics
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- Multiple-Wavelength All-Monolithic 1.55μm Vertical-Cavity Surface-Emitting Laser Arrays
- 1.55μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction
- 1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Dielectric Properties of Hydrogen Silsesquioxane Films Degraded by Heat and Plasma Treatment
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- Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity Lasers
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- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes
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- Fabrication Method of Densely Spaced 1.55 μm Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array Structure for the Application of Dense Wavelength Division Multiplexing
- 1.1 mW Single-Mode Output Power of All-Monolithic 1.3 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Multiple-Wavelength All-Monolithic 1.55-μm Vertical-Cavity Surface-Emitting Laser Arrays
- 1.55 μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction