1.55 μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction

スポンサーリンク

概要

• 論文の詳細を見る

• We propose a new type of 1550 nm vertical-cavity surface-emitting laser incorporating proton implantation and a tunneling junction. The structure relies on a stable material and well-established processing techniques. The fabricated laser operates under pulsed conditions emitting at 1575 nm.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-15

著者

• Ju Young-gu

  Electronics And Telecommunications Research Insitute

• Kim Jong-hee

  Electronics And Telecommunications Research Insitute

• Kwon O-kyun

  Electronics And Telecommunications Research Insitute

• Shin Jae-heon

  Electronics And Telecommunications Research Insitute

• HAN Won-Suk

  Electronics and Telecommunications Research Insitute

• Yoo Byung-soo

  Electronics And Telecommunications Research Insitute

• Han Won-Suk

  Electronics and Telecommunications Research Institute, 161 Kajung, Yusung, Taejon 305-350, Korea

• Yoo Byung-Soo

  Electronics and Telecommunications Research Institute, 161 Kajung, Yusung, Taejon 305-350, Korea

• Ju Young-Gu

  Electronics and Telecommunications Research Institute, 161 Kajung, Yusung, Taejon 305-350, Korea

関連論文

• 1.3μm Vertical-Cavity Surface-Emitting Lasers Using Heavy Ion Implantation and Dielectric Mirror : Optics and Quantum Electronics
• Multiple-Wavelength All-Monolithic 1.55μm Vertical-Cavity Surface-Emitting Laser Arrays
• 1.55μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction
• 1.55 μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction

スポンサーリンク