1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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KIM Jong-Hee
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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KWON O-Kyun
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Kwon O‐k
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Han W‐s
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Song Hyun-woo
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kim Jong-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Kim Jong-hee
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kwon O-kyun
Basic Research Laboratory Electronics And Telecommunications Research Institute
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PARK Mi-Ran
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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HAN Won-Seok
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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LEE Ki-Hwang
RayCan Co., Ltd.
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PARK Seong-Joo
RayCan Co., Ltd.
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YOO Byueng-Su
RayCan Co., Ltd.
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Park Mi-ran
Basic Research Laboratory Electronics And Telecommunications Research Institute
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PARK Sang-Hee
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Park Sang-hee
Raycan Co. Ltd.
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Park Sang-hee
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Lee Ki-hwang
Raycan Co. Ltd.
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Yoo B‐s
Raycan Co. Ltd.
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Han Won-seok
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Yoo Byueng-su
Raycan Co. Ltd.
関連論文
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- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Multiple-Wavelength All-Monolithic 1.55μm Vertical-Cavity Surface-Emitting Laser Arrays
- 1.55μm Vertical-Cavity Surface-Emitting Lasers Using Ion Implantation and Tunneling Junction
- 1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
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- Fabrication Method of Densely Spaced 1.55 μm Multiple-Wavelength Vertical-Cavity Surface-Emitting Laser Array Structure for the Application of Dense Wavelength Division Multiplexing
- Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
- 1.1 mW Single-Mode Output Power of All-Monolithic 1.3 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Multiple-Wavelength All-Monolithic 1.55-μm Vertical-Cavity Surface-Emitting Laser Arrays
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes