Characteristics of Organic Light Emitting Diodes with Al-Doped ZnO Anode Deposited by Atomic Layer Deposition

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-02-10

著者

• PARK Sang-Hee

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• Park Sang-hee

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Hwang Chi-sun

  Etri

• PARK Sang-Hee

  ETRI

• LEE Jeong-Ik

  ETRI

• CHU Hye

  ETRI

• LEE Jeong-Ik

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• HWANG Chi-Sun

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• CHU Hye

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• Hwang Chi‐sun

  Etri

関連論文

• 1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
• Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
• Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
• Characteristics of Organic Light Emitting Diodes with Al-Doped ZnO Anode Deposited by Atomic Layer Deposition
• Oxide Thin Film Transistor Circuits for Transparent RFID Applications
• Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
• 1.1 mW Single-Mode Output Power of All-Monolithic 1.3 μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

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