Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
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概要
- 論文の詳細を見る
A dc thin-film electroluminescent (TFEL) device has been fabricated to achieve low voltage operation and high-luminance blue emission. The device is based on an [Al/ZnS/luminescent CaS:Pb/indium-tin-oxide] structure in which electrons can be injected into the luminescent layer at high energy due to the field-induced acceleration of electron carriers within the ZnS layer. The blue-emitting CaS:Pb and ZnS layers were consecutively prepared by atomic layer deposition. Preliminary results obtained from this device indicate a threshold voltage for light emission of as low as 17 V and a higher luminous efficiency of 0.1–0.36 lm/W compared with that of CaS:Pb ac TFEL.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-15
著者
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Park Sang-hee
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Yun Sun
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Kim Yong
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Park Sang-Hee
Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajong-dong, Yusong-gu, Daejeon 305-350, Korea
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Kim Yong
Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajong-dong, Yusong-gu, Daejeon 305-350, Korea
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