High Performance Lithography with Advanced Modified Illumination (Special Issue on Quarter Micron Si Device and Process Technologies)

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A modified illumination technique recently developed is known to improve the resolution and DOF (depth of focus) dramatically. But, it requires substantial modification in optical projection system and has some problems such as low throughput caused by low intensity and poor uniformity. And it is very difficult to adjust illumination source according to pattern changes. To solve these problems, we developed a new illumination technique, named ATOM (Advanced Tilted illumination On Mask) which applies the same concept as quadrupole illumination technique but gives many advantages over conventional techniques. This newly inserted mask gives drastic improvements in many areas such as DOF, resolution, low illumination intensity loss, and uniformity. In our experiments, we obtained best resolution of 0.28 μm and 2.0 μm DOF for 0.36 μm feature sizes with i-line stepper, which is two times as wide as that of conventional illumination technique. We also obtained 0.22 μm resolution and 2.0 μm DOF for 0.28 μm with .45 NA KrF excimer laser stepper. For complex device patterns, more than 1.5 times wider DOF could be obtained compared to conventional illumination technique. From these results, we can conclude that 2nd generation of 64 M DRAM with 0.3 μm design rule can be printed with this technology combined with high NA (>0.5) i-line steppers. With KrF excimer laser stepper, M DRAM can be printed with wide DOF.
社団法人電子情報通信学会の論文
1994-03-25

High Performance Lithography with Advanced Modified Illumination (Special Issue on Quarter Micron Si Device and Process Technologies)

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