Modeling of Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

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概要

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• The effect of a sacrificial layer residue on a cantilever beam in the nano-electro-mechanical nonvolatile memory is investigated for the optimization of reliability characteristics. A model of pull-in voltage with a sacrificial layer residue for optimizing the wet etching process of such a memory is proposed. The feasibility of the proposed model is verified by finite element analysis simulation. Although the width of the sacrificial layer residue shows a quadratic relationship with pull-in voltage, the thickness of the sacrificial layer residue shows a linear relationship with pull-in voltage. The Young's modulus difference between the sacrificial layer residue and the cantilever beam material is a critical parameter for determining pull-in voltage.

• 2011-10-25

著者

• Cho Il

  Department Of Biotechnology Chung-ang University

• Jee Yong

  Department of Electronic Engineering, Myongji University, Yongin, Gyeonggi 449-728, Republic of Korea

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