Yoo Yo-Han | First R&D Centre, Agency for Defence Development

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概要

• Yoo Yo-Hanの詳細を見る
• 同名の論文著者
• First R&D Centre, Agency for Defence Developmentの論文著者

関連著者

• LEE Woong

  Department of Molecular Science and Technology, Ajou University

• Lee Woong

  Department Of Materials Science And Engineering Yonsei University

• Lee Woong

  Department Of Dermatology Chungnam National University School Of Medicine

• Yoo Yo-Han

  First R&D Centre, Agency for Defence Development

• Lee Woong

  Department of Chemistry and Division of Energy Systems Research, Ajou University, Suwon 443-749, Korea

• YOON Euijoon

  School of Materials Science and Engineering, Seoul National University

• Yoon E

  Seoul National Univ. Seoul Kor

• Yoon Euijoon

  School Of Materials Science And Engineering And Isrc Seoul National University

• Yoon Euijoon

  School Of Material Science And Engineering Seoul National University

• Yoon Euijoon

  School Of Mat. Sci. And Eng. Seoul National Univ

• Lee W

  Department Of Materials Science And Engineering Yonsei University

• SHIN Hyunho

  School of Materials Science and Engineering, Seoul National University

• YOO Yo-Han

  First Systems Development Centre, Agency for Defence Development

• Yoo Yo-han

  First Systems Development Centre Agency For Defence Development

• Yoo Yo

  First R&d Centre Agency For Defence Development

• Shin H

  School Of Materials Science And Engineering Seoul National University

• Shin Hyunho

  School Of Materials Science And Engineering Seoul National University

• Shin Hyunho

  Department Of Ceramics Engineering Kangnung National University

• Myoung Jae

  Department Of Materials Science And Engineering Yonsei University

• Yoon Euijoon

  School Of Electronic And Electrical Engineering Kyungpook National University

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著作論文

• Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Role of In_xGa_As Layer Composition in Modifying Strain Fields and Carrier Confinement Potentials in a Close-stacked InAs/GaAs Quantum Dot System(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

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