ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
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概要
- 論文の詳細を見る
The nanocrystal memory is the most promising candidate of post giga-bit EEPROM since it has some good properties as follows : fast and low-voltage operation using direct tunneling mechanism due to thin gate dielectrics, good nonvolatility due to suppression of charge loss between dots as storage nodes, and simple structure of one transistor-one cell. So it is so important to form nanocrystals. In this paper, a new method to form nanocrystals using wet etching is proposed and characteristics of the memory using this method is analyzed.
- 社団法人電子情報通信学会の論文
- 2000-06-23
著者
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Hyungcheol Shin
School Of Electrical Eng.
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Seong-jing Yoo
School Of Electrical Eng.
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Jongho Lee
Wonkwang Univ.
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Yoo Seong-jong
School of Electrical Eng.
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Lee Jongho
Wonkwang Univ.
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Shin Hyungcheol
School of Electrical Eng.
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- ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
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