Characteristics of MOSFET with Non-overlapped Source-Drain to Gate

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概要

• 論文の詳細を見る

• A MOSFET structure with non-overlapped source-drain to gate region is proposed to overcome the challenges in sub-0.1μm CMOS device. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. Electrons were induced reasonably under the spacer. Internal physics and speed characteristics were studied with the non-overlap distance. The proposed structure had good subthreshold slope and DIBL characteristics compared to those of overlapped structure.

• 社団法人電子情報通信学会の論文
• 2002-05-01

著者

• Chang Sung-il

  Kaist

• Shin Hyungcheol

  KAIST

• Lee Hyunjin

  Kaist

• Lee J

  Wonkwang University

• LEE Jongho

  Wonkwang University

• Lee Jongho

  Wonkwang Univ.

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