Fabrication and Characterization of a Quantum Dot Flash Memory
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概要
- 論文の詳細を見る
The essential technology for fabricating the quantum dot flash memory is the nanolithography. With E-beam paterning technology and Cl_2 based RIE etching, self-aligned 100 nm wide quantum dot and 100nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift is about 0.4 V and the corresponding number of electrons involved in this operation are estimated to be about 70.
- 社団法人電子情報通信学会の論文
- 1999-07-22
著者
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Lee Hyun-ju
Kaist
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Hwang Taekeun
LG Semicon. Co.
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Shin Hyungcheol
KAIST
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Hwang Taekeun
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology:hyundai Micr
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Han Sangyeon
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Han Sangyeon
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Shin Hyungcheol
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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