Gate-Induced Drain Leakage Currents in Metal Oxide Semiconductor Field Effect Transistors with High-κ Dielectric
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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Chang Sung-il
Kaist
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Shin Hyungcheol
KAIST
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Shin Hyungcheol
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Shin Hyungcheol
Department Of Electrical Engineering And Computer Science Kaist
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Lee J
Wonkwang University
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LEE Jongho
School of Electrical Engineering, Wonkwang University
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CHANG Sung-il
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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Lee Jongho
School Of Electrical Eng. Wonkwang Univ.
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Chang Sungi-il
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology
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