Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device and Its Application to Complementary Metal Oxide Semiconductor Image Sensor Readout Circuit
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概要
- 論文の詳細を見る
The behavior of random telegraph signal (RTS) noise in metal oxide semiconductor field effect transistor (MOSFETs) with different oxidation processes and its effects on the readout circuit in complementary MOS (CMOS) image sensor were experimentally studied. Statistically, RTS noise in large number of devices have been measured both in the device with single oxide and dual oxide and we analyzed its amplitude and power spectrum density. Through the analysis, we found that there are significantly different behaviors of RTS noise between single oxide devices and dual oxide devices due to different characteristic of oxide traps. We not only provided information of traps in both single and dual oxide devices but also applied different RTS noise behavior of both two cases to readout circuits in CMOS image sensor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Shin Hyungcheol
Department Of Electrical Engineering And Computer Science Kaist
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Yoon Youngchang
Department of Electronic Engineering, Seoul National University, #059, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Lee Hochul
Department of Electronic Engineering, Seoul National University, #059, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Jeon Jongwook
Department of Electronic Engineering, Seoul National University, #059, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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- Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device and Its Application to Complementary Metal Oxide Semiconductor Image Sensor Readout Circuit