A New Physical RF Model of Junction Varactors
スポンサーリンク
概要
- 論文の詳細を見る
In this study, the RF model of junction varactors based on physical structure was proposed, the procedure of modeling was studied and then the simulation results using the model were compared with the measurement data. The mean error between the measured s-parameters and simulated s-parameters was less than 3.5% for various device geometries. Therefore, the proposed physical model, which is accurate and scalable over a wide range of layout dimensions, can be effectively used to design radio-frequency integrated circuits (RFIC).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
-
Shin Hyungcheol
Department Of Electrical Engineering And Computer Science Kaist
-
HAN Kwangseok
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
-
Ahn Youngjoon
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
-
Shin Hyungcheol
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
-
Ahn Youngjoon
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
-
Han Kwangseok
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
関連論文
- Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects
- Lateral Silicon Field-Emission Devices using EIectron Beam Lithography
- Silicon Nano-Crystal Memory with Tunneling Nitride
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
- Gate-Induced Drain Leakage Currents in Metal Oxide Semiconductor Field Effect Transistors with High-κ Dielectric
- A New CMOS Passive Mixer with High Linearity
- A Nano-Structure Memory with Silicon on Insulator Edge Channel and a Nano Dot
- Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects
- A New Physical RF Model of Junction Varactors
- Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device and Its Application to Complementary Metal Oxide Semiconductor Image Sensor Readout Circuit