ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries

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概要

• 論文の詳細を見る

• The nanocrystal memory is the most promising candidate of post giga-bit EEPROM since it has some good properties as follows : fast and low-voltage operation using direct tunneling mechanism due to thin gate dielectrics, good nonvolatility due to suppression of charge loss between dots as storage nodes, and simple structure of one transistor-one cell. So it is so important to form nanocrystals. In this paper, a new method to form nanocrystals using wet etching is proposed and characteristics of the memory using this method is analyzed.

• 社団法人電子情報通信学会の論文
• 2000-06-23

著者

• Shin Hyungcheol

  Dept. of Electrical Engineering and Computer Science, Seoul National University

• Shin Hyungcheol

  Dept. Of Eecs Kaist

• Yoo Seong-jong

  Dept. Of Eecs Kaist

• LEE Jongho

  School of Electrical Engineering, Wonkwang University

• Lee Jongho

  School Of Electrical Eng. Wonkwang Univ.

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