Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-Level Random Telegraph Signal Noise
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概要
- 論文の詳細を見る
As device size shrinks smaller, random telegraph signal (RTS) noise, which is caused by the trapping and detrapping of a single carrier will become a serious issue. In this paper, we characterized four level RTS and extracted the characteristics of two independent traps. Once the position of the trap is found in the oxide ($x_{\text{T}}$) and along the channel ($y_{\text{T}}$) with respect to source, we extracted difference between the oxide conduction band energy ($E_{\text{Cox}}$) and trap energy ($E_{\text{T}}$). Finally we introduce eight level RTS observed in some sample which indicates existence of three active traps.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Shin Hyungcheol
School Of Electrical Engineering And Computer Science Seoul National University
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Yang Seungwon
School of Electrical Engineering and Computer Science, Seoul National University, #059, San 56-1, Sillim-dong, Kwanak-gu, Seoul 151-742, Korea
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Lee Hochul
School of Electrical Engineering and Computer Science, Seoul National University, #059, San 56-1, Sillim-dong, Kwanak-gu, Seoul 151-742, Korea
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Shin Hyungcheol
School of Electrical Eng.
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