A New 1T DRAM Cell : Cone Type 1T DRAM Cell
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概要
- 論文の詳細を見る
We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
- （社）電子情報通信学会の論文
- 2011-05-01
著者
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Park Byung‐gook
School Of Electrical Engineering Seoul National University
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Lee Gil
Inter-university Semiconductor Research Center Seoul National University:school Of Electrical Engine
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Park Byung-gook
School Of Electrical Engineering Seoul National University
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Cho Seongjae
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Kim Doo‐hyun
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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CHO Seongjae
School of Electrical Engineering and Computer Science, Seoul National University
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KIM Doo-Hyun
School of Electrical Engineering and Computer Science, Seoul National University
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Park Byung-gook
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Park Byung-gook
School Of Electrical Engineering And Computer Sciences And The Inter-university Semiconductor Resear
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Park Byung-gook
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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LEE Gil
School of Electrical Engineering and Computer Sciences and the Inter-University Semiconductor Resear
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Park Byung-Gook
School of Electrical Engineering & Inter-University Semiconductor Research Center (ISRC), Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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