Investigation of field concentration effects in arch gate silicon-oxide-nitride-oxide-silicon flash memory
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- Evaluation and resolution for nonideal characteristics of complementary metal-oxide-semiconductor devices fabricated on silicon-on-insulator
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- Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering (GIBL)(Session4A: Nonvolatile Memory)
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- Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1)
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- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles
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- Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
- Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
- 3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
- Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
- Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
- Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
- Design and Simulation of Asymmetric MOSFETs(Junction Formation and TFT Reliability,Fundamentals and Applications of Advanced Semiconductor Devices)
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