2P4-3 横振動により接合された高延性ENIGめっき電極の評価(ポスターセッション)

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概要

• 論文の詳細を見る
• 2009-11-18

著者

• Jung Seung

  School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.

• LEE Jong

  School of Electrical Engineering, Seoul National University

• Jo Jung

  School of Adv. Mat. Sci. & Eng., Sungkyunkwan Univ.

• Moon Jung

  Dep. Mechanical Eng., Suwon Science College

• Lee Jong

  School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.

• Jo Jung

  School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.

• Moon Jung

  Dep. Mechanical Eng. Suwon Science College

関連論文

• 2P4-3 横振動により接合された高延性ENIGめっき電極の評価(ポスターセッション)
• Extraction of Trap Depth in Flash Cell Having Arch-Active Structure
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• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Fuzzy Logic-Based Quantized Event Filter for RFID Data Processing
• Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
• Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
• Synchronous Mirror Delay for Multi-phase Locking
• Synchronous Mirror Delay for Multi-phase Locking
• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Isolation of 151 Mutants that Have Developmental Defects from T-DNA Tagging
• Anomalous Noise Degradation Caused by Device Size Effects in SOI MOSFETs
• On the Bit Error Probability of 16DAPSK in a Frequency-Selective Fast Rayleigh Fading Channel with Cochannel Interference
• Active Channel Reservation for Coexistence Mechanism (ACROS) for IEEE 802.15.4 and IEEE 802.11
• Dependence of Contact Resistance on Substrate Doping and Impact of Mixed Ion Implantation
• Lateral Silicon Field-Emission Devices using EIectron Beam Lithography
• Monte Carlo Simulation of Single-Electron Nanocrystal Memories
• Non-Quasi-Static Small-Signal Model of RF MOSFETs Valid up to 110GHz
• CARS temperature measurement in a Liquid Kerosene fueled Gas Turbine Combustor Sector Rigs(Measurement, Temperature)
• An advanced method for the determination of carboxyl methyl esterase activity using gas chromatography-chemical ionization-mass spectrometry
• Microstructure Evaluation of Friction Stir Welded AZ91 with CaO Mg Alloy
• Microstructural Characterizations Following Friction Stir Welding of Dissimilar Alloys of Low- and High-Carbon Steels
• Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps through the Random Telegraph Noise
• Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
• Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
• Monte Carlo Simulation of Single-Electron Nanocrystal Memories
• Highly Manufacturable and Reliable 80-nm Gate Twin Silicon–Oxide–Nitride–Oxide–Silicon Memory Transistor
• Characterization of Sensitivity and Resolution of Silicon Resistive Probe

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