Low-energy deuterium implantation for the enhancement of gate oxide reliability in MOSFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• This paper is focused on the new method to improve gate oxide reliability in MOSFET, which is related to deuterium incorporation. Low-energy implantation of D^+ ions was achieved at the back-end of process line (BEOL). The D^+ ions could reach near the gate oxide, SiO_2, region, and passivate some of traps or defects through the chemical bond with Si or O atom. Our result was also compared with that of the conventional H^+ passivation method. Device parameter variations as well as the gate leakage current depend on the degradation of gate oxide and are improved by our deuterium incorporation method. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrades the performance. Our results suggest the new passivation process that gives enhanced device reliability, and can be implemented conveniently in the standard CMOS process.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Lee Jae-sung

  Division Of Information & Communication Engineering Uiduk University

• Lee Yong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Do Seung-Woo

  School of Electrical Engineering and Computer Science, Kyungpook National University

• Do Seung-woo

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Lee Jae

  Division Of Information & Communication Engineering Uiduk University

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