Modeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal–Oxide–Silicon Field-Effect Transistor

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概要

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• In this study, we examined time-evolution defect generation under constant-voltage stress for a 3-nm-thick gate oxide metal–oxide–silicon field-effect transistor (MOSFET). Defect generation under the stress is related to the density of electron traps that are generated from the relaxation of strained Si–O bonds by injection holes. The solution for the time-dependent defect generation was calculated using short-time-measured gate leakage data and analytical models. This approach was taken by fitting an effective activation energy distribution from time-evolution-degradation electrical data. We assume that the disorder-induced variations in Si–O activation energy follow a Fermi-derivative distribution. Our methodology will provide the exact and convenient method of determining the degradation of gate oxides of nano scaled complementary MOS (CMOS) devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-01-25

著者

• Lee Jae-sung

  Division Of Information & Communication Engineering Uiduk University

• Lee Jae-Sung

  Division of Information and Communication Engineering, Uiduk University, Gyeongju, Gangdong 525, Korea 780-713

関連論文

• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Low-energy deuterium implantation for the enhancement of gate oxide reliability in MOSFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low-energy deuterium implantation for the enhancement of gate oxide reliability in MOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor
• Modeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal–Oxide–Silicon Field-Effect Transistor

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