Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry

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概要

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• We have studied the chemical mechanical polishing (CMP) of a shallow-trench-isolation (STI) structure in 0.18 μm semiconductor device fabrication. CMP is applied for the STI structure with and without a reverse moat pattern. The real-time end point detection (EPD) method based on the motor current (MC) signal is tested, and the factors affecting the conventional motor current detection method are investigated. The results showed that the EPD method could not be applied to STI-CMP with a reverse moat etch process due mainly to the pad conditioning effect and the characteristics of an open nitride structure. In the case of direct STI-CMP without a reverse moat etch process, global planarization with low defect levels can be achieved using a high-selectivity slurry (HSS) with a high selectivity for SiO2 and Si3N4, and the EPD method shows acceptable and reproducible results.

• 2003-10-15

著者

• Kim Sang-yong

  Fab Division Anam Semiconductor Co. Inc.

• LEE Woo-Sun

  Department of Electrical Engineering, CHOSUN University

• Seo Yong-jin

  Department Of Electrical And Electronics Engineering Daebul University

• Park Jin-seong

  Department Of Advanced Materials Engineering Chosun University

• Kim Sang-Yong

  FAB Division, ANAM Semiconductor Co., Inc., Kyounggi-do 420-130, Korea

• Lee Woo-Sun

  Department of Electrical Engineering, CHOSUN University, Kwang-Ju 501-759, Korea

• Seo Yong-Jin

  Department of Electrical Engineering, Daebul University, Chonnam-do 526-702, Korea

• Seo Yong-Jin

  Department of Electrical and Electronic Engineering, Daebul University, 72 Sanhoi, Samho, Youngam, Chonnam-do 526-702, Korea

• Park Jin-Seong

  Department of New Material Engineering, CHOSUN University, Kwang-Ju 501-759, Korea

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