N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device with High Latchup Immunity for High Voltage Operating I/O Application
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
SEO Yong-Jin
Department of Electrical Engineering, DAEBUL University
-
Seo Yong-jin
Department Of Electrical And Electronics Engineering Daebul University
-
KIM Kil-Ho
Technology & Product Development Center, MagnaChip Semiconductor Ltd.
-
Kim Kil-ho
Technology & Product Development Center Magnachip Semiconductor Ltd.
-
Seo Yong-Jin
Department of Electrical and Electronic Engineering, Daebul University, 72 Sanhoi, Samho, Youngam, Chonnam-do 526-702, Korea
関連論文
- Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry
- Electronic and Optical Characteristics of Multilayer Nanocrystalline Silicon/Adsorbed Oxygen Superlattice : Semiconductors
- Effects of Various Facility Factors on Chemical Mechanical Polishing Process Defects
- N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device with High Latchup Immunity for High Voltage Operating I/O Application
- N-Type Extended Drain Silicon Controlled Rectifier Electrostatic Discharge Protection Device for High-Voltage Operating Input/Output Applications
- Effects of Silica Slurry Temperature on Chemical Mechanical Polishing for Tetraethyl Orthosilicate Film
- Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry