Effects of Silica Slurry Temperature on Chemical Mechanical Polishing for Tetraethyl Orthosilicate Film

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概要

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• The effects of silica slurry temperature on the chemical mechanical polishing (CMP) performance of tetraethyl orthosilicate (TEOS) film were investigated. Slurry showed the following dependences of temperature: pH decreased slightly; conductivity showed an increase of 1.88% per degree; the dispersion ability of abrasive particles was improved; the particle size of silica slurry decreased; removal rate significantly increased from 10–40°C and was maintained constant beyond 40°C. An increasing amount of hydroxyl (OH-) groups diffused into the TEOS, and weakened reactants, such as H–C–O–Si bonds on the surface of TEOS film, were actively generated with increasing slurry temperature, which could be removed easily.

• 2005-09-10

著者

• LEE Woo-Sun

  Department of Electrical Engineering, CHOSUN University

• Seo Yong-jin

  Department Of Electrical And Electronics Engineering Daebul University

• Lee Woo-Sun

  Department of Electrical Engineering, Chosun University, Gwangju 501-759, Korea

• Kim Nam-Hoon

  Research Institute of Energy Resources Technology, Chosun University, Gwangju 501-759, Korea

• Seo Yong-Jin

  Department of Electrical Engineering, Daebul University, Chonnam-do 526-702, Korea

• Seo Yong-Jin

  Department of Electrical and Electronic Engineering, Daebul University, 72 Sanhoi, Samho, Youngam, Chonnam-do 526-702, Korea

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• Effects of Silica Slurry Temperature on Chemical Mechanical Polishing for Tetraethyl Orthosilicate Film
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