Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
-
Lee W‐s
Korea Electronics Technology Institute
-
Kim Sang-yong
Fab Division Anam Semiconductor Co. Inc.
-
Park J‐s
Hanyang Univ. Kyunggido Kor
-
Lee Woo-sun
Korea Electronics Technology Institute
-
SEO Yong-Jin
Department of Electrical Engineering, DAEBUL University
-
LEE Woo-Sun
Department of Electrical Engineering, CHOSUN University
-
PARK Jin-Seong
Department of New Material Engineering, CHOSUN University
-
Seo Yong-jin
Department Of Electrical Engineering Daebul University
-
Kim S‐y
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
関連論文
- Effect of B_2O_3 and CuO on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn_Ta_)O_3 Ceramics
- Effect of Ta_2O_5 on Microstructure and Microwave Dielectric Properties of Ba(Zn_Ta_)O_3 Ceramics
- Structural and Dielectric Properties of the BaTi_5O_ Thin Film Grown on the Poly-Si Substrate using RF Magnetron Sputtering
- Microstructure and Microwave Dielectric Properties of SnO_2-Added Ba(Zn_Ta_)O_3 Ceramics
- Effect of Microstructure on Microwave Dielectric Properties of Al_2O_3-Added Ba(Zn_Ta_)O_3 Ceramics
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Hillock Formation of SnO_2 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition
- Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry
- Growth and Surface Morphology of Textured NiO Thin Films Deposited by Off-Axis RF Magnetron Sputtering
- Electronic and Optical Characteristics of Multilayer Nanocrystalline Silicon/Adsorbed Oxygen Superlattice : Semiconductors
- Effects of Various Facility Factors on Chemical Mechanical Polishing Process Defects
- N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device with High Latchup Immunity for High Voltage Operating I/O Application
- Effects of Silica Slurry Temperature on Chemical Mechanical Polishing for Tetraethyl Orthosilicate Film
- Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry