Ru/TiO_2/ZrO_2/TiN (RIT-TiO_2/ZrO_2) Capacitor Structure for the 50nm DRAM Device and beyond
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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LEE Kwang
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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Kim Sung-tae
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lee Kwanghee
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Young-sun
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lim Jae-soon
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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KIM Ki-Chul
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHOI Jae
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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TAK Yong
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Wan-Don
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Jin
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHO Kyuho
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Younsoo
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHUNG Jeong-Hee
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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HAN Woosung
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Tak Yong
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Cho Kyuho
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Ki-chul
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Wan-don
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Han Woosung
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Younsoo
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Choi Jae
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Jin
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Chung Jeong-hee
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lee Kwang
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
関連論文
- Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO_2 for 50nm DRAM Application
- Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Investigation of CVD-Co Silicidation for the Improvement of Contact Resistance
- Ru/TiO_2/ZrO_2/TiN (RIT-TiO_2/ZrO_2) Capacitor Structure for the 50nm DRAM Device and beyond
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
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