Influence of Hydrogen Plasma Treatment and Post-Annealing on Defects in 4H-SiC
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概要
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In this work, we have investigated the influence of hydrogen plasma treatment on defects in 4H-SiC. Hydrogen was incorporated in 4H-SiC single crystals by plasma treatment, and its effects were characterized by current–voltage measurements and deep-level transient spectroscopy. The reverse leakage current level reduction and the Schottky barrier height increase after hydrogen plasma treatment could be explained by Fermi level (FL) pinning and interface states passivation. Plasma-induced defects were formed by the bombardment of energetic particles on the crystal lattice, but they were annealed out at low annealing temperatures of 400–500°C. Considering the annealing temperature, it can be concluded that these defect levels are related to the carbon vacancy defects. It was also revealed by $I$–$V$ measurement that the hydrogen passivation of defects was maintained up to 500°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Jeon In
School Of Materials Science & Engineering Seoul National University
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Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
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Jeon In
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Um Myung
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Eom Da
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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