Monte Carlo Simulation Study of Local Critical Dimension Error on Mask and Wafer
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-30
著者
-
Ahn Byoung-sup
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
CHOI Seong-Woon
Semicodutor R&D Center, Samsung Electronics
-
SOHN Jung-Min
Semicodutor R&D Center, Samsung Electronics
-
Sohn Jung-min
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Park Joon-soo
Semiconductor R&d Center Samsung Electronics Co. Ltd.
関連論文
- Challenge to 0.13μm Device Patterning using KrF
- Challenge to 0.13μm Device Patterning using KrF
- Challenge to 0.13μm Device Patterning using KrF
- A Study of Loading Effect during Electron-Beam Exposure and Etching Process in Photomask Fabrication
- Monte Carlo Simulation Study of Local Critical Dimension Error on Mask and Wafer
- Monte Carlo Simulation Study of Local Critical Dimension Error on Mask and Wafer