A Study of Loading Effect during Electron-Beam Exposure and Etching Process in Photomask Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-30
著者
-
Cho Sung-yong
Semicodutor R&d Center Samsung Electronics
-
CHOI Ji-Hyeon
Semicodutor R&D Center, Samsung Electronics
-
KIM Byung-Gook
Semicodutor R&D Center, Samsung Electronics
-
JEON Chan-Uk
Semicodutor R&D Center, Samsung Electronics
-
CHOI Seong-Woon
Semicodutor R&D Center, Samsung Electronics
-
SOHN Jung-Min
Semicodutor R&D Center, Samsung Electronics
-
Sohn Jung-min
Semicodutor R&d Center Samsung Electronics
-
Jeon Chan-uk
Semicodutor R&d Center Samsung Electronics
-
Choi Ji-hyeon
Semicodutor R&d Center Samsung Electronics
-
Kim Byung-gook
Semicodutor R&d Center Samsung Electronics
-
Choi Seong-woon
Semicodutor R&d Center Samsung Electronics
関連論文
- A Study of Loading Effect during Electron-Beam Exposure and Etching Process in Photomask Fabrication
- Monte Carlo Simulation Study of Local Critical Dimension Error on Mask and Wafer
- Monte Carlo Simulation Study of Local Critical Dimension Error on Mask and Wafer