Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-11-25
著者
-
Lee Kong-soo
Process Team R&d Division Lg Semicon Co Ltd.
-
YOO Dae-Han
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
HAN Jae-Jong
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
SON Gil-Hwan
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
LEE Chang-Hun
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
NOH Ju-Hee
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
KIM Seok-Jae
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
KIM Yong-Kwon
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
YOU Young-Sub
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
HYUNG Yong-Woo
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
LEE Hyeon-Deok
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
Noh Ju-hee
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Kim Seok-jae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Son Gil-hwan
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
You Young-sub
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Lee Chang-hun
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Kim Yong-kwon
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Lee Hyeon-deok
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Hyung Yong-woo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Lee Kong-soo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Yoo Dae-han
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Han Jae-jong
Process Development Team Memory Division Samsung Electronics Co. Ltd.
関連論文
- Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
- Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process