Bias-Tunable Multiple-Transconductance with Improved Transport Characteristics of δ-doped In_<0.28>Ga_<0.72>As/GaAs/In_<0.24>Ga_<0.76>As/GaAs High Electron Mobility Transistor Using a Graded Superlattice Spacer
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
-
Lee Ching-sung
Department Of Electronic Engineering Feng Chia University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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