Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
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概要
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We fabricated metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta_2O_5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (V_<FB>) increase whilst the density of interfacial trap (D_<it>) gradually decreases. The effective metal work function (Φ_<m,eff>) of Pt metal gate, extracted from the relations of EOT versus V_<FB> are calculated to be 〜5.29 eV, implying that Fermi-level pinning in Ta_2O_5 gate dielectric is insignificant.
- 2010-06-23
著者
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LEE Hoon-Ki
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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CHANDRA S.
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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SHIM Kyu-Hwan
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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YUN Hyung-Joong
Jeonju Center, Korea Basic Science Institute (KBSI)
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LEE Jouhahn
Jeonju Center, Korea Basic Science Institute (KBSI)
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CHOI Chel-Jong
Department of BIN Fusion Technology, Chonbuk National University
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Choi Chel-jong
Department Of Bin Fusion Technology Chonbuk National University
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Lee Jouhahn
Jeonju Center Korea Basic Science Institute (kbsi)
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Lee Hoon-ki
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Yun Hyung-joong
Jeonju Center Korea Basic Science Institute (kbsi)
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Chandra S.
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Shim Kyu-Hwan
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
関連論文
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
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