Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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The stress effect of SiGe p-type metal oxide semiconductor field effect transistors(MOSFETs) has been investigated to compare property of devices made of the Si Bulk and the partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. Threshold voltage shift is monitored as a function of hot carrier stress time of both structures. Hot carrier induced device degradation is observed significant from I-V measurements at specified stress intervals. A comparison of the V_<th> shift for the SiGe Bulk and the SiGe PD SOI devices clearly shows that the SiGe PD SOI is more immune from hot carriers than the SiGe Bulk. The 1/f noise increase was not serious after hot carrier stress as measured in saturation mode. It is concluded that the properties of SiGe PD SOI could be maintained stable in operation of hot carrier injection condition.
社団法人電子情報通信学会の論文
2007-06-18