Han Tae-Hyun | Radio Frequency Devices Division, AUK
スポンサーリンク
概要
関連著者
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Han Tae‐hyun
Auk Kor
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SHIM Kyu-Hwan
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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Hwang Yong-woo
Radio Frequency Devices Division Auk
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Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Choi A-Ram
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
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Choi Sang-Sik
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
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Kim Jae-Yeon
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
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Yang Jeon-Wook
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
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Han Tae-Hyun
Radio Frequency Devices Division, AUK
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Cho Deok
Radio Frequency Devices Division, AUK
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Cho Deok
Radio Frequency Devices Division Auk
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Kim Jae-yeon
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Choi Sang-sik
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Han Tae-hyun
Radio Frequency Devices Division Auk
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Yang Jeon-wook
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Choi A-ram
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Shim Kyu-Hwan
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Choi A-Raum
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
著作論文
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_Ge_ Heterostructure Channel