Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_<0.88>Ge_<0.12> Heterostructure Channel
スポンサーリンク
概要
- 論文の詳細を見る
- 2008-05-01
著者
-
Han Tae‐hyun
Auk Kor
-
SHIM Kyu-Hwan
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
-
Hwang Yong-woo
Radio Frequency Devices Division Auk
-
Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
-
Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
-
Choi A-Ram
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
-
Choi Sang-Sik
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
-
Kim Jae-Yeon
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
-
Yang Jeon-Wook
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk Nat
-
Han Tae-Hyun
Radio Frequency Devices Division, AUK
-
Cho Deok
Radio Frequency Devices Division, AUK
-
Cho Deok
Radio Frequency Devices Division Auk
-
Kim Jae-yeon
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
-
Choi Sang-sik
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
-
Han Tae-hyun
Radio Frequency Devices Division Auk
-
Yang Jeon-wook
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
-
Choi A-ram
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
-
Shim Kyu-Hwan
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
関連論文
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
- Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_Ge_ Heterostructure Channel
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder
- Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta_2O_5 Gate Stacks
- Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process