Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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This paper presents the selective epitaxial growth(SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures of 675〜725℃ with high aspect ratio mask of dielectric films. The SEG process has been investigated to understand the influence of loading effect, mask pattern shape and size dependency, and RPCVD process parameter effects. In order to overcome difficulties associated with high-aspect ratio, it is critical to understand the process pressure in the ranges of a few tens Torr showing intermediate regime of kinetic and molecular flows. SiGe epi layers designed with X_<Ge>〜0.2 and 10〜100nm in thickness were adequate as an extrinsic base for self-aligned heterojunction bipolar transistors (HBTs) in order to reduce the parasitic resistance for the higher maximum oscillation frequencies. SEG of SiGe using RPCVD showed considerable advantages for the improvements of parasitic components and operation speed.
社団法人電子情報通信学会の論文
2007-06-18