Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta_2O_5 Gate Stacks
スポンサーリンク
概要
- 論文の詳細を見る
We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Φm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ∼5.29eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.
- 2011-05-01
著者
-
YOON Jong-Won
Department of Advanced Materials Science and Engineering, Dankook University
-
Yoon Jong-won
Department Of Advanced Materials Science And Engineering Dankook University
-
Choi Chel-jong
Department Of Bin Fusion Technology Chonbuk National University
-
Lee Hoon-ki
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
-
Shim Kyu-hwan
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
-
Yoon Jong-won
Dep. Of Advanced Materials Sci. And Engineering Dankook Univ.
-
Chandra S.
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
-
Shim Kyu-hwan
Chonbuk National University
-
Chandra S.
Chonbuk National University
-
Choi Chel-jong
Chonbuk National University
-
LEE Hoon-Ki
Chonbuk National University
-
YOON Jong-Won
Dankook University
関連論文
- In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO_2 Films
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Fabrication of Gold Dot and Tubular Gold Arrays Using Anodic Aluminum Oxide Film as Template
- Characteristics of Partially Disordered Gallium Nitride Nanodots Synthesized by Pulsed-Laser Ablation
- Quantum Confinement Effect of Amorphous GaN Quantum Dots Prepared by Pulsed-Laser Ablation
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
- Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_Ge_ Heterostructure Channel
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effects of Fe Film Thickness and Pretreatments on the Growth Behaviours of Carbon Nanotubes on Fe-doped (001) Si Substrates
- 319 Use of Hydrogen Trapping in High Strength Steel Welds
- Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO_2 Gate Dielectric
- Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder
- Laser-Induced Synthesis of CaMoO_4 Nanocolloidal Suspension and Its Optical Properties
- Effects of Te Doping on Ordering and Antiphase Boundaries in GaInP
- Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides
- Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta_2O_5 Gate Stacks
- Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods